Facile fabrication of graphene-topological insulator Bi2Se3 hybrid Dirac materials via chemical vapor deposition in Se-rich conditions

Direct deposition of a uniform and high-quality Bi2Se3 thin film on a graphene film (layer controlled) is performed using a catalyst-free vapor deposition system in a Se-rich environment. The Se-rich environment is utilized to fill the Se vacancies and is beneficial to achieving the uniform chemical composition of the product. The layers of graphene can be controlled easily and precisely by the transfer times. Besides the graphene film, the morphology of the product is sensitive to the growth parameters (temperature of the substrate, growth time and gas flow). By controlling the growth parameters, we can also grow a crystal Bi2Se3 plate on the graphene/SiO2/Si substrate. Raman spectroscopy, scanning electron microscopy, transmission electron microscopy and X-ray diffraction confirm the presence of uniform and high-quality Bi2Se3.