Interface roughness scattering in type II broken-gap GaInAsSb/InAs single heterostructures

The effect of the interface roughness (IFR) scattering on the carrier mobility in type II broken-gap p-GaInAsSb/p-InAs heterostructures with self-consistent quantum wells at the interface has been studied experimentally. It was found that the low-temperature mobility decreases as μ∼d2 when the quantum well width at the interface changes from 400 to 50 A upon raising the acceptor (Zn) doping level of the quaternary layer. It was established that the IFR scattering governs the low-temperature mobility in the two-dimensional electron channel at the heterointerface. The parameters of the IFR scattering, roughness height Δ=12 A, and correlation length Λ=100 A were evaluated on the basis of structural, photoluminescent, and magnetotransport data.