Modeling of Stress and Strain Fields Induced during the Smart-Cut Process on Silicone - Influence of Different Couplings for Diffusion of Hydrogen at a Microscopic Scale

The Smart-Cut technology consists in the increasing of pressure imposed by the diffusion of hydrogen ions in the silicon substrate leading to a wafer splitting. In the present work, we studied the evolution of the stress field in the crystalline lattice of silicon, the diffusion of hydrogen ions as well as the growth and coalescence of cavities. Meanwhile, we test several models and simulate these phenomena by a numerical approach, in order to compare its results to experimental observations.