Modeling distributed dynamic lateral large-signal switching effects in bipolar transistors

The presently existing approach for describing dynamic emitter current-crowding in present compact models is only applicable to small-signal operation. Therefore, different options for modeling textbf fast nonlinear large-signal switching of bipolar transistors have been investigated. Such options include multi-transistor models and different versions of a two-transistor model as well as a single transistor with lateral charge partitioning across the DC internal base resistance. Compared to the results of 2D numerical device simulation of the internal transistor region under the emitter, a multi-transistor model with at least five segments and a single transistor model with lateral charge partitioning appear to be most accurate for describing the time dependent large-signal collector current.