Non-Volatile Giant Resistance Switching in Metal-Insulator-Manganite Junctions

Heteroepitaxial CeO2(80nm)/L0.67Ca0.33MnO3(400nm) film structures have been pulsed laser deposited on LaAlO3(001) single crystals to fabricate two terminal resistance switching devices. Ag/CeO2/L0.67Ca0.33MnO3 junctions exhibit reproducible switching between a high resistance state (HRS) with insulating properties and a semiconducting or metallic low resistance state (LRS) with resistance ratios up to 105. Reversible electrical switching is a polar effect achievable both in continuous sweeping mode and in the pulse regime.