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Acemap > Paper > 1 ° のオフ角を持つ4H-SiCのC面上におけるホモエピタキシャル成長と積層欠陥の研究

1 ° のオフ角を持つ4H-SiCのC面上におけるホモエピタキシャル成長と積層欠陥の研究

2015 
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