Heat dissipation in temperature-critical component regions of semiconductor devices by heat pipes, which are connected to the substrate backside

Substrate (330) for the manufacture of semiconductor devices, wherein the substrate (330) comprises: a substrate material on a first layer (301) arranged semiconductor layer (303); and a heat distribution layer (331) formed in contact with the first substrate material layer (301) below the same and in contact with a second substrate material layer (301A) above the same, wherein the heat distribution layer (331) has a thermal conductivity greater than a thermal conductivity of the first substrate material layer (301) and the semiconductor material of the semiconductor layer (303).