Sub-THz On-Chip Dielectric Resonator Antenna with Wideband performance

This paper presents the design of a wideband on-chip dielectric resonator antenna (DRA) operating at sub-THz frequencies. The DRA consists of inverted E-shaped on-chip driver, a low-permittivity supporter, and a dielectric resonator (DR). Substrate integrated waveguide (SIW) cavity backed on-chip antenna with L-probe feeding mechanism is adopted for the driver at 350 GHz. A standard 130-nm SiGe BiCMOS back-end process is employed in its design. The input matching, gain, and radiation efficiency of the on-chip driver are enhanced by placing a supporter and a DR on top of it. From full-EM simulations, the DRA achieves the -10 dB impedance bandwidth of 65 GHz (18.5%) with peak gain of about 10 dBi and radiation efficiency of 75% at 350 GHz. The developed antenna is highly suitable for future broadband front-end systems operating above 300 GHz.