Multilayer GaAs-AIAs heterostructure laser pumped transversely by an electron beam

An experimental investigation was made of the influence of various types of multilayer GaAs--AlAs heterostructure isotypically doped with Zn or Te on the threshold current of a laser pumped transversely by an electron beam in the energy range 10--40 keV. The best results were obtained for a three-layer p-type structure in which the active layer was situated between two wide-gap layers and the structure was pumped through one of these layers. The lowest threshold current density for an electron beam energy of 40 keV was 0.08 A/cm/sup 2/ at T=85 /sup 0/K and 1.3 A/cm/sup 2/ at 300 /sup 0/K.