The effect of uniaxial strain on the electrical properties of graphene nanoribbon

The effect of uniaxial strain on the band structure of armchair graphene nanoribbon (AGNR) based on the tight-binding method is explored. In addition, ribbon width effect on the band gap deviations of different classes of n-AGNRs under uniaxial strain is investigated. A tunable band gap in strained n-AGNRs is observed for all of n-AGNRs families with different ribbon widths and a V shape alteration in bandgap as a result of applied uniaxial strain is obtained. Moreover, the density of states for n-AGNRs is modeled analytically. Therefore, a metal-semiconductor transition for uniaxially strained (3m+2)-AGNRs is resulted. It is proved that the strain can modify the electrical properties of AGNRs.