Light-emitting diode and laser of p-GaN/ZnO-based multi-quantum well/n-ZnO structure and preparation method

The invention discloses a light-emitting diode and laser of a p-GaN/ZnO-based multi-quantum well/n-ZnO structure and a preparation method. The light-emitting diode and laser includes a p-GaN layer, a ZnO-ZnMgO multi-quantum well layer, an n-ZnO layer and metal electrodes. The preparation method includes the steps of: first adopting a molecular beam epitaxy method to successively prepare the ZnO/ZnMgO multi-quantum well layer and the n-ZnO layer on a p-GaN film; and then plating the metal electrodes in p-GaN and n-ZnO regions respectively. The device prepared by the invention adopts the ZnO/ZnMgO multi-quantum well as an active layer, and a threshold value of the light-emitting diode and laser be lowered and luminous efficiency can be improved; in addition, to solve the problem that efficient and stable p-ZnO is difficult to realize in a homogeneous structure, the device adopts p-GaN as a hole injection layer; and at the same time, compared with other p type materials, GaN has the advantages of having the same structure as ZnO and having low epitaxial mismatch.