A radiation hardened 1-M bit SRAM on SIMOX material

SOI technology and design combine to give a high performance radiation hardened 1M SRAM manufacturable at the 0.8 /spl mu/m technology node. Features include a nominal 23 ns access time and a worst case minimum Write pulse of less than 15 ns, along with total dose and transient dose hardness, resistance to single event upset, and latch-up immunity. Detailed characterization results are presented in this paper.