Formation of a transition layer during heteroepitaxy of III–V compound semiconductors in gas-phase epitaxy systems

It is known that during gas-phase epitaxy of InP and GaAs the region of the film close to the heteroboundary is formed with altered phase, structural, and electrophysical properties. The main cause for this is formation of a transition layer due to a change in the growth mechanism (transition from nucleational to layer-step growth) and the structure of the growing surface (height and density of growth steps).