Effect of diffusion and fluctuations in the nonequilibrium charge carrier density on the angular distribution of the output intensity for injection lasers based on an InAsSb/InAsSbP heterostructure

We have used numerical modeling to study the effect of diffusion and fluctuations in the nonequilibrium carrier density in the active layer of injection lasers based on an InAsSb/InAsSbP heterostructure on the angular distribution of the output intensity. We show that diffusion smoothes out the nonequilibrium carrier distribution in the active layer, and the fundamental lasing mode is stable over a much broader range of stripe contact widths. At the same time, diffusional processes can lead to formation of local regions with a jump in the density of nonequilibrium charge carriers, fluctuations in which can act as a source of instability for the fundamental lasing mode. Analysis of the numerical modeling results gives qualitative agreement with experimental data on the dependence of the angular distribution of the output radiation for different stripe contact widths.