HIGH SPEED SEMICONDUCTOR SWITCH (TWO TERMINAL) AND HIGH SPEED SEMICONDUCTOR SWITCH (GATE).

Abstract : The report presents the results obtained from preproduction testing of three device types, details of circuitry considerations of turn-on time measurements, results of investigation of gate-cathode impedance of the 2N1765 device type, and evaluation of 3-terminal reliability and 2-terminal dv/dt problems. Preliminary investigation of producing a device with electrical characteristics similar to the 2N1765 but housed in a 7/16 inch stud package was performed and the results are reported. (Author)