V-band 130 nm CMOS multistage amplifier incorporating gain-boosting technique

To design a high gain amplifier at V-band using 130 nm CMOS process, the gain-boosted technique is adopted to increase the maximum achievable gain (G max ). Impedance matching synthesis is investigated for input and output matching circuits based on transmission lines. By adopting appropriate transistor size, a single stage amplifier can achieve the maximum gain of 10 dB at 53 GHz.