Intramolecularly coordinated gallium sulfides: Suitable single source precursors for GaS thin films

Our studies have been focused on the synthesis of N→Ga coordinated organogallium sulfides [L1Ga(-S)]3 (1) and [L2Ga(-S)]2 (2) containing either N,C,N- or C,N-chelating ligands L1,2 (L1 is {2,6-(Me2NCH2)2C6H3}- and L2 is {2-(Et2NCH2)-4,6-tBu2-C6H2}-). As the result of different ligand, compounds 1 and 2 differ mutually in their structure. To change the Ga/S ratio, unusually N→Ga coordinated organogallium tetrasulfide L1Ga(-S4) (3) was prepared and unprecedented complex [{2-[CH{(CH2)3CH3}(-OH)]-6-CH2NMe2}C6H3]GaS (4) was also isolated as the minor by-product of the reaction. Compounds 1 - 3 were further studied as potential single source precursors for amorphous GaS thin film deposition by spin coating method