Superiority of Langmuir-Blodgett resist films in electron beam lithography as demonstrated by the backscattering yield

Abstract Applying Monte Carlo techniques, we have simulated the electron trajectories in a Langmuir-Blodgett (LB) polymethylmethacrylate (PMMA) resist and a Si substrate covered with a Cr film. A “refraction” model of high energy electrons in multilayer media is first used to describe the changes in scattering distance and scattering angle of an electron while it passes from one layer into another layer. In a Monte Carlo simulation, the trajectories of high energy electrons are calculated. The results of electron beam exposure experiments demonstrate the accuracy of the refraction model. The electron backscattering yields in PMMA LB resist and spin-cast resist have been calculated for various conditions. Finally, the superiorities of LB film resists in electron beam exposure lithography are discussed.