Epitaxial yttria-stabilized zirconia on (1 1 02)sapphire for YBa sub 2 Cu sub 3 O sub 7 minus. delta. thin films

Epitaxial yttria-stabilized zirconia (YSZ) films were deposited on (1{bar 1}02) sapphire by pulsed laser deposition. The films are formed in a cubic phase with the {ital a} axis normal to the substrate surface. Ion beam (2.8 MeV He{sup ++}) channeling measurements show that the YSZ films are highly crystalline with a channeling minimum yield of 8%. The epitaxial relationship between the film and substrate is further confirmed by a cross-section transmission electron microscopy study. Epitaxial YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} thin films deposited on YSZ/sapphire have {ital T}{sub {ital c}} and {ital J}{sub {ital c}} of up to 89 K and 1{times}10{sup 6} A/cm{sup 2} at 77 K, respectively.