A method of forming a two-stage doping in a semiconductor substrate

A method of forming a two-stage doping in a semiconductor substrate (80), wherein in one of the two-stage doping (90, 92) to be provided impurity region (89) by means of a strong diffusion (10) dopant in the semiconductor substrate (80) is diffused and, in this , a high surface concentration is formed on dopant, after the strong diffusion (10) in more strongly doped regions (91) of the two-stage doping (90, 92) the semiconductor substrate (80) is locally heated (12) and on the impurity region (89) forming an oxide layer (88) (16).