Al2O3 and TiO2 Atomic Layer Deposition on Copper for Water Corrosion Resistance

Al2O3 and TiO2 atomic layer deposition (ALD) were employed to develop an ultrathin barrier film on copper to prevent water corrosion. The strategy was to utilize Al2O3 ALD as a pinhole-free barrier and to protect the Al2O3 ALD using TiO2 ALD. An initial set of experiments was performed at 177 °C to establish that Al2O3 ALD could nucleate on copper and produce a high-quality Al2O3 film. In situ quartz crystal microbalance (QCM) measurements verified that Al2O3 ALD nucleated and grew efficiently on copper-plated quartz crystals at 177 °C using trimethylaluminum (TMA) and water as the reactants. An electroplating technique also established that the Al2O3 ALD films had a low defect density. A second set of experiments was performed for ALD at 120 °C to study the ability of ALD films to prevent copper corrosion. These experiments revealed that an Al2O3 ALD film alone was insufficient to prevent copper corrosion because of the dissolution of the Al2O3 film in water. Subsequently, TiO2 ALD was explored on copper...