Li-acceptor doping in ZnS/GaAs by post-heated molecular beam epitaxy

Abstract Li-doping of ZnS/GaAs layers by means of molecular beam epitaxial (MBE) growth using post-heated molecular beams is reported. Low-temperature photoluminescence measurements and secondary ion mass spectrometry have clarified that the Li atoms act as acceptors and donor Ga is incorporated from the substrate. It is also found that under higher doping levels the growth rate is considerably reduced. Together with the reflection high-energy electron diffraction (RHEED) results, this behavior is attributed to some interaction between Li and S atoms on the growing surface.