Shallow junction formation with boron fluoride and low energy boron ion implantation into silicon

Abstract Boron of 10 keV and boron fluoride of 45 keV were implanted into self preamorphized silicon with doses of 1 × 10 15 cm −2 . Samples were annealed with rapid thermal annealing. The junction depth and electrical activity were measured by spreading resistance profile analysis. The residual damage was investigated with transmission electron microscopy. The shallow junction formed by low energy boron implantation into preamorphized silicon was compared with that by BF 2 + implantation. The role of fluorine on restoration of preamorphized silicon layers in BF 2 + implanted samples was studied with secondary ion mass spectroscopy and channeling backscattering experiments.