Process for manufacturing a piezoelectric single crystal device layer and microelectronic, photonic or optical layer comprising such

The invention relates to a method of manufacturing a layer (10) of a single crystal piezoelectric material, characterized in that it comprises: - providing a (100) donor substrate of said piezoelectric material, - the provision of a receiving substrate (110), - transferring a layer called "seed layer" (102) of said donor substrate (100) on the receiving substrate (110), - the implementation of an epitaxy of the piezoelectric material on the seed layer (102) until the desired thickness of the single crystal piezoelectric layer (10).