Logic drive consideration for Trench-gate IGBT

This paper presents the initial consideration and the experimental results of logic gate drive used for Trench-gated IGBT (TIGBT). The logic drive IGBT was examined by using a 600 V/50 A (j/sub c/=200 A/cm/sup 2/) TIGBT with thin gate oxide and low threshold voltage and the TIGBT was driven at logic voltage level of V/sub GE/=/spl plusmn/5 V. A V/sub CE/(sat) of 1.53 V with a turn off loss of 2 mJ/pulse was achieved. Furthermore, the turn-off capability of the TIGBT achieved almost full square characteristic.