A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs

A straightforward and fast (~200 µs) DCIV technique, which is completely compatible with the commercial semiconductor analyzer., is demonstrated to measure the time kinetics of interface trap generation (ΔN I T ) during and after DC/AC NBTI stress in Si p-FinFETs. The measurement time of each VG step in a staircase IV waveform can be down to 2 µs, It is found that the repassivation of ΔN IT after DC stress is a very fast process and happens within 200 µs recovery time. The delayed recovery phenomenon of ΔN IT is observed only for Mode-B AC stress and high frequency (f) Mode-A AC stress., resulting in the f-dependent ΔN IT under Mode-A AC stress and f-Independent ΔN IT under Mode-B AC stress.