Resistive switching effect on Al2O3/InGaAs stacks

Display Omitted HighlightsWe examine the post breakdown characteristics of metal gate/Al2O3/InGaAs.It is observed resistive switching (RS) effect.The oxide-substrate interface is studied by X-ray photoelectron spectroscopy spectra.The As-O bonds are responsible for large frequency deviations and the RS effect. The resistive switching (RS) phenomenon is currently attracting a lot of attention due to its potential applicability for nonvolatile memory devices. Among all the systems currently under consideration, the analysis of MG/Al2O3/InGaAs is very relevant since this stack is a strong candidate for the new generation of CMOS devices with high mobility channels.