Simulation and calculation of the piezoelectric modulus of a lead zirconate-titanate thin film in a test microstructure

Results of simulation of stresses in the test structure of a silicon beam and analytical calculation of piezoelectric modulus d 31 of a lead zirconate-titanate (PZT) thin film arranged in the region of an elastic element are presented. The characteristics of the sensitive element of acceleration are calculated based on a PZT thin film with an inertial mass made of silicon.