I D -V D and I D -V G analysis of 45nm NMOS with strained silicon on insulator (sSOI) by using simulation

SILVACO TCAD simulator which is consisting of a process simulator, ATHENA and device simulator, ATLAS were used to simulate and analyze the electrical characterization of 45nm NMOS with strained silicon on insulator (sSOI). In this paper, the process parameters with halo implantation and sSOI were used. The effective simulation was performed by using ATHENA process simulator to modify theoretical values. While the electrical characteristics of the device was produce out by ATLAS simulator which are the variation of ID-VD and ID-VG were produced. These two modules were combined to aid in design and optimizer the process parameters. The threshold voltage (V TH ) result was compare with the 45nm NMOS device.