The influence of PCl/sub 3/ on planarisation and selectivity of InP regrowth by atmospheric pressure MOVPE

The introduction of phosphorus trichloride into the AP-MOVPE growth of InP has been found to dramatically improve the regrowth adjacent to mesa structures. By suppressing growth in the [100] direction and enhancing growth in the [311] directions planar regrowth is achieved. Polycrystalline deposits on dielectric masks can also be completely suppressed.