MESFET large-signal model based on small-signal measurements for time-domain CAD
1988
A large-signal model using a full transistor characterisation is developed for time-domain CAD of circuits. It uses 2-D look-up tables to describe the FETs nonlinear parameters which are a function of two internal voltages. It is validated in an experimental study of the step response of an NEC3SK MESFET.
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