SiGe HBT (Heterojunction Bipolar Transistor) double-strain-plane BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) integrated device and manufacturing method thereof

The invention discloses a SiGe HBT (Heterojunction Bipolar Transistor) double-strain-plane BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) integrated device and a manufacturing method of the SiGe HBT double-strain-plane BiCMOS integrated device. The method comprises the following steps of: manufacturing a buried layer on a substrate sheet, growing N-Si as the bipolar device collector region; etching a base region; growing P-SiGe, i-Si, i-Poly-Si in the base area; manufacturing deep trench isolation; manufacturing an emitter, a base and a collector; forming a SiGe HBT device; etching an active area of an NMOS (N-Channel Metal Oxide Semiconductor) device and a PMOS (P-Channel Metal Oxide Semiconductor) device; manufacturing an active area of the NMOS device and the PMOS device; manufacturing a virtual grid; carrying out light doping drain (LDD) structure injection of the NMOS device and the PMOS device respectively; manufacturing a side wall; self-aligning so as to form the drain of the NMOS device and the PMOS device; etching the virtual grid; depositing a SiON grid medium layer and a W-TiN composite grid; forming a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) structure; and finally constructing the SiGe HBT device, the double-strain-plane Si BiCMOS integrated device and a circuit. According to the method, the tension strain Si with high electronic mobility rate and the compressive strain SiGe with high cavity mobility rate are utilized as the conductive channels of the NMOS device and the PMOS device sufficiently; and the performance of the BiCMOS integrated circuit is improved effectively.