Multiport semiconductor memory device

The semiconductor memory device according to the present invention when accessing the same row, setting the word line (WLA) and (the WLB) the voltage level of the power supply voltage (VDD-Vtp). On the other hand, when the different access lines, the word lines (WLA) or (the WLB) is set to the voltage level of the power supply voltage (VDD). Accordingly, when both of the ports (PA, PB) to simultaneously access the same row, by the word line (WLA, WLB) voltage level to the power supply voltage (VDD-Vtp), the memory cell by suppressing the drive current of the transistor can be prevented from the current amount becomes smaller than that. As a result, the deterioration of SNM can be prevented.