Investigation of the electronic properties of in situ annealed low-temperature gallium arsenide grown by molecular beam epitaxy

Current conduction through in situ annealed low‐temperature gallium arsenide (LT GaAs) grown by molecular beam epitaxy (MBE) has been studied using Schottky diodes. The dominant transport mechanism in these films was found to be space‐charge‐limited current conduction in the presence of deep level states. We also examined two LT GaAs films, one with initially 4000 A thick subsequently etched back to 2000 A and the other sample with an initial thickness of 2400 A, and found that the excess arsenic redistribution or clustering, carrier trap levels, and concentration depend strongly on the initial thickness of the LT GaAs film.