Engineering performance of barristors by varying the thickness of WS2

Abstract We have investigated the performances of barristors with a graphene-tungsten disulfide (WS 2 ) junction by varying the thickness of WS 2 and gate oxide. On-current density ( J ON ) and on- and off-current ratio ( J ON / J OFF ) increases, and sub-threshold swing ( V SS ) decreases with the WS 2 thickness. Also, barristors with thicker WS 2 required less workfunction shift, to switch the barristors. Therefore, unlike the traditional devices, V SS of barristor with gate dielectric 300 nm was smaller than that of 90 nm, when the former is fabricated with thicker WS 2 than the latter. Since materials properties of 2-dimensional semiconductors generally vary with their thickness, the thickness of 2D semiconductors could become a key parameter to engineer the performance of barristors with graphene and the 2D semiconductors.