Critical comparison of carrier lifetime at 1.55 µm of ion-irradiated InGaAs, cold-implanted InGaAsP, and ErAs:GaAs

We compare the photocarrier lifetime measured in Br-irradiated InGaAs and cold Fe-implanted InGaAsP. We also demonstrate the possibility of a two-photon absorption (TPA) process in ErAs:GaAs. The lifetime and the TPA were measured with a fiber-based 1550 nm time-resolved differential transmission (?T) set-up. The InGaAs-based materials show a positive ?T with sub-picosecond lifetime, whereas ErAs:GaAs shows a negative ?T consistent with a two-photon absorption process.