3D Monte Carlo Analysis of Discrete Dopant Effects on Electron noise in Si Devices

A preliminary study of velocity fluctuations in simple devices using an atomistic model for the ionized impurity scattering is presented. The velocity fluctuations are responsible for thermal noise in semiconductor devices. In this paper the influence on the spectral density of velocity fluctuations of the boundary conditions, the doping level, the length of the resistors and the excess/default of impurities has been addressed.