Behavior of copper in gallium arsenide with a high tellurium concentration

The electrophysical properties and cathode luminescence spectra of gallium arsenide with a high tellurium concentration (n = 2·1018 cm−3) alloyed with copper are investigated under different diffusion conditions. Centers are determined from measurements of the Hall effect with an ionization energy of 0.190 ± 0.006 eV whose concentration does not depend on the arsenic vapor pressure (0.1 and 1 atm) and the cooling rate of the samples from the diffusion temperature. A band with hνm = 1.30–1.32 eV whose intensity depends on the cooling conditions of the samples was observed in the cathode luminescence spectra of these samples. The nature of the observed defects is discussed.