Preparation of SrBi 2 Ta 2 O 9 Thin Films by Liquid-Delivery MOCVD Without Additional Solvents

SrBi 2 Ta 2 O 9 thin films were prepared by ECR plasma enhanced metalorganic chemical vapor deposition (ECR-MOCVD) with a liquid-delivery system using one cocktail source without an additional solvent. The strontium-tantalum double alkoxide, Sr{Ta[OC 2 H 4 H(CH 3 ) 2 ](OC 2 H 5 ) 5 } 2 , was dissolved in stabilized trimethyl bismuth, Bi(CH 3 ) 3 / dioxane. This source system has been used in a conventional bubbling system. Deposition rate and the composition of the films were strictly controlled by the concentration and the composition of the cocktail source. Therefore, high reproducibility was realized by using this system. The constituent phase of the stoichiometric SBT film as-deposited at 500 C on a (111)Pt/TiO 2 /SiO 2 /Si substrate was a fluorite phase and transformed to the single phase of SBT by the post annealing at 800 C. It showed almost the same ferroelectricity as the stoichiometric composition film.