Development of half-metallic ultrathin Fe3O4 films for spin-transport devices

We attempted to fabricate a high-quality Fe3O4 film while satisfying both low-thermal preparation (≦573 K) and film thinness (≦500 A). X-ray diffractometry showed that our prepared Fe3O4 film was epitaxially grown onto a MgO (100) substrate. The saturation magnetization, resistivity, and Verwey point were, respectively, ∼438 emu/cm3, ∼10 000 μ Ω cm, and ∼110 K. These values were comparable to those of the Fe3O4 bulk. Our experimental results suggested that a high-quality Fe3O4 film could be obtained even under the crucial conditions of the deposition temperature being low (∼523 K) and the film being ultrathinned (∼100 A).