Optimization of the Reliability of 0.25 μm n-MOSFETs
2010
The capability of different simulated parameters to predict interface trap generation in electrically stressed n-channel MOSFETs is evaluated. The insight gained from this study is used to optimize the drain of 0.25 μm n-channel fully overlapped nitrided (FOND) [1] MOSFETs in terms of drivability, speed and reliability.
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