Optimization of the Reliability of 0.25 μm n-MOSFETs

The capability of different simulated parameters to predict interface trap generation in electrically stressed n-channel MOSFETs is evaluated. The insight gained from this study is used to optimize the drain of 0.25 μm n-channel fully overlapped nitrided (FOND) [1] MOSFETs in terms of drivability, speed and reliability.