Influence of capacitive effects on the dynamic of a CNTFET by Monte Carlo method

Abstract We present a study of carbon nanotube field effect transistors (CNTFET) operation and performance using Monte Carlo simulation including phonon scattering. In CNTFETs, operating in the quantum capacitance regime, the low driving electric field in the channel yields a high fraction of ballistic transport. In terms of ballisticity, I ON / I OFF ratio and intrinsic delay, the performance of 100 nm-long CNTFET is shown to be as high as that of much smaller Si transistors.