Coater/developer and new underlayer application to sub-30nm process

As the industry continues to push the limits of integrated circuit fabrication, reliance on EUV lithography has increased. Additionally, it has become clear that new techniques and methods are needed to mitigate pattern defectivity and roughness at Litho and Etch together with eliminating film-related defects. These approaches require further improvements to the process chemicals and the lithography process equipment to achieve finer patterns. In particular improvements in the coater/developer hardware and process are required to enable the use of a wide variety of chemicals as well as compatibility with existing systems. This paper reviews the ongoing progress in coater/developer processes that are required to enable EUV patterning sub-30nm line and space by using MOR (Metal Oxide Resist).