Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD

Computational fluid dynamics (CFD) simulation is performed three-dimensionally to study the flow field，gas phase reaction and growth rate in vertical metal organic chemical vapor deposition (MOCVD) reactor with rotating wafers for the growth of gallium nitride(GaN). The effects of wafers rotation，MOCVD reaction chamber height，ammonia influx and tem- perature distribution on the substrate surface are investigated which impact greatly on the flow field，gas phase reaction and the growth rate of GaN. The simulated results give some improvement suggestions to the operation parameters of the MOCVD reactor.