Ir-electroded BST thin film capacitors for 1 giga-bit DRAM application

(Ba,Sr)TiO/sub 3/ (BST) thin film capacitors using iridium (Ir) as an electrode material are investigated for high density (1 Gbit-scale and beyond) dynamic random access memories (DRAMs). Excellent electrical characteristics (e.g. high polarization and low leakage) of BST capacitors with Ir top electrodes were obtained. The excellent resistance of these capacitors to hydrogen damage during forming gas anneals is also reported.