Ultrafast Carrier Redistribution in Single InAs Quantum Dots Mediated by Wetting-Layer Dynamics

Individual epitaxial semiconductor quantum dots (QDs) have been extensively considered as an ``artificial atom'' platform for quantum optics and photonics applications. The QD carrier dynamics responsible for ultimate device performance is indeed complex, due in part to rich interaction with the wetting layer's two-dimensional carrier reservoir. The authors investigate this interaction with time-resolved experiments and rate-equation modeling, showing that these analyses are important for understanding the limitations of single-photon photoluminescence emission, improving lasers and fast optical modulators, and developing next-generation ultrafast all-optical switches.