Dielectric properties of CsTiOAsO4 single crystal

Abstract The dielectric properties of CsTiOAsO4 single crystals have been measured in the temperature range from -170°C to 200°C at different frequencies. The material exhibits a clear dielectric relaxation process. The dielectric relaxation process is well described by the Cole-Cole plots with a relaxation time distribution parameter of 0.17. The temperature dependence of optimum relaxation time of the relaxation process obeys the Arrhenius relationship reasonably well with an activation energy of 0.4eV. Based on the above results, the mechanism of the relaxation process is discussed using the polarizability and movement characteristics of the Cs+ ion in the open crystallographic structure.