Estimation of losses of GaN HEMT in power switching applications based on experimental characterization

Abstract An experimental study based on pulsed I-V characterization is conducted at various temperatures to estimate the losses of GaN High-Electron-Mobility Transistors (HEMTs) for switching circuit applications. The estimation of the GaN HEMT power losses is performed by a SPICE simulation using a non-segmented Electro-thermal model. The parameters of this model are extracted using Levenberg–Marquardt Algorithm. The proposed modeling methodology is compared to literature and shows good convergence of static characteristics. The temperature dependency of device parameters is also taken into consideration. Furthermore, the modelled device is verified in a real switching application using a developed efficient switching bench. The verification of the GaN HEMT model shows a good convergence to measurements in term of conduction power losses. Finally, the evolution of the GaN HEMT power losses in switching applications is modelled as a function of the temperature and output current.