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VIA-3 characteristics of pulsed laser annealed two micron channel length N-channel SOS transistor
VIA-3 characteristics of pulsed laser annealed two micron channel length N-channel SOS transistor
1981
Y. M. Chi
J.B. Valdez
A. Gupta
G. Olson
L.D. Hess
Keywords:
Micrometre
Electronic engineering
Pulsed laser
Annealing (metallurgy)
Transistor
Analytical chemistry
Communication channel
Physics
Optoelectronics
n channel
Correction
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