Photoluminescence study of He+ ion hot-implanted sapphire after Pb-208(27+) ion irradiation

In the present work the photoluminescence (PL)character of sapphire implanted with He ions and subsequently irradiated with Pb-208(27+) of 1.1MeV/u was studied. Sapphire single crystals were implanted with 110keV He ions at 600K temperature to fluences ranging from (0.5 to 2) x 10(17) ions/cm(2), some of them were subsequently irradiated with Pb-208(27+). From. experimental results we found PL spectra peaks at 375nm, 413nm, and 450nm, and it's intensity gets maximum at fluence of 5 x 10(16) He ions/cm(2). Also we found a new peak at 390nm after subsequent Ph-208(27+) irradiation, which is possibly due to the crystallized sediment containing nano crystal Al2O3 appeared on the sample surface.